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11-xemhjbab.jfif 1112-gycg5cqi.jfif files-qaknnbhu-kw2yynrn.zip

Answered 3 days After Nov 25, 2021

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Amar Kumar answered on Nov 29 2021

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SiC Power Schottky and PiN Diodes
SiC Power Schottky and PiN Diodes
Introduction
POWER diodes built of silicon ca
ide (SiC) are projected to outperform those constructed of other semiconductors in terms of performance.
The main characteristics of 4H-SiC PiN high voltage diodes are:
1) comparable voltage drop in the on-state to stacked Si diodes at sufficiently high cu
ent densities;
2) switching speeds at least 30 times faster than any of their Si counterparts due to the use of thinner epitaxial layers; and
3) Good high-temperature operating characteristics.
Structure Symbol and Basic
Almost all diodes today are silicon-based semiconductors. The PN junction is a type of diode in which the P layer is generated in N type silicon.
The other is the schottky type, which involves piling metal (ba
ier metal) onto N type silicon. Furthermore, both mesa and planar belong to the PN junction type family.
Literature
An ideal rectifying metal contact deposited on an optimally constructed epitaxial layer, an adequate edge termination design, a highly doped substrate, and a backside ohmic contact make up a typical Schottky diode.
As mentioned in [1,] there is a trade-off between these competing...

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