1. MOS Band Diagrams. Consider four simple cases of the MOS capacitor, all combinations of low gate...

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1. MOS Band Diagrams. Consider four simple cases of the MOS capacitor, all combinations of low gate metal work function (e.g. Al qF M ˜ 4.05 eV), high gate metal work function (e.g. Pt qF M ˜ 5.15...

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1. MOS Band Diagrams. Consider four simple cases of the MOS capacitor, all combinations of low gate metal work function (e.g. Al qF_M ˜ 4.05 eV), high gate metal work function (e.g. Pt qF_M ˜ 5.15 eV), n+type silicon and p+type silicon substrate. Assume the substrate is highly doped, such that E_F coincides with E_C (n+) and E_V (p+) respectively. The SiO₂ thickness is 2 nm. Please assume silicon electron affinity is qX_S = 4.05 eV and band gap is E_G = 1.1 eV.
(a) Sketch the four band diagrams across all MOS structures in equilibrium (V_G = 0 V).
(b) Sketch the four band diagrams exactly at threshold (V_G = V_T), as the surface is inverted. Is the threshold voltage V_T >0 or <0 in each case?

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Answered Same Day Dec 23, 2021

Robert · Accepted Answer

Question 
1. MOS Band Diagrams. Consider four simple cases of the MOS capacitor, all combinations of 
low gate metal work function (e.g. Al qΦM ≈ 4.05 eV), high gate metal work function (e.g. Pt 
qΦM ≈ 5.15 eV), n+type silicon and p+type silicon substrate. Assume the substrate is highly 
doped,

1. MOS Band Diagrams. Consider four simple cases of the MOS capacitor, all combinations of low gate metal work function (e.g. Al qF M ˜ 4.05 eV), high gate metal work function (e.g. Pt qF M ˜ 5.15...

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