At 600°C the germanium content of the liquid indium-germanium phase t in equilibrium with solid...

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At 600°C the germanium content of the liquid indium-germanium phase t in equilibrium with solid germanium is about 20 atomic percent, as determined from the In-Ge binary phase diagram. Using the equilibrium K-value as stated in Table 11.1, estimate the acceptor concentration in the recrystallized p-layer of an alloyed p-n rectifier made by melting an indium pellet on n-type germanium, raising the temperature to 600°C, and gradually cooling. Perform the same calculation for a rectifier made in the same way using an alloy of indium containing 5 atomic percent gallium. Which alloy would be preferred for forming the emitter of a p-n-p junction transistor?

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Dr Shweta · Accepted Answer

Given that: 
An alloyed p-n rectifier is designed by melting the pellets of indium on n-type Germanium
Case 1: In the liquid indium-Germanium phase t which is in equilibrium with solid germanium, the Germanium content is about 20 atomic percent
To find: 
the concentration of acceptor in the recrystallized p-layer
Solution: 
To calculate the acceptor concentration, the following formula is used: 
Nd – Na = Nc exp [-Eg/kT] --------[1]
Here, Nd = concentration of donor impurity atoms = concentration of Germanium
As the germanium content is 20 atomic percent, so concentration of Germanium is calculated as:

At 600°C the germanium content of the liquid indium-germanium phase t in equilibrium with solid germanium is about 20 atomic percent, as determined from the In-Ge binary phase diagram. Using the...

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