1. A p-n junction has doping densities Na=5x10^18 cm^-3 and Nd=5x10^15. a) Calculate Vbi b) Calculate the total space charge width c) Calculate the space charge width and the width of the n and p regions at a reverse voltage of 4 V. d) Calculate the junction capacitance for part c with an area of the junction of 5x10^-4 cm^2. 2. For an abrupt p-n junction of area 10^-4 cm^-2, the measured capacitance under reverse bias of 20 V is 12 pF/cm^2. Calculate the donor concentration. 3. An MOS structure is formed using a p type silicon wafer withNA=5×1016 cm-3. Calculate the maximum space charge width. Assume T=300 K. 4. Consider an aluminum-silicon dioxide-silicon MOS structure at 300 K. Assume ?m'=3.20 V, ?'=3.25 and Eg=1.11 eV. Suppose p type doping concentration is NA =1015 cm-3. Calculate the work function difference in the system. 5. Find the maximum width of the depletion region for an ideal MOS capacitor on p type Si with Na=1016cm-3. Calculate VT for the MOS structure using aluminum as the gate metal. Assume an interface charge of 8.00×10-9 C ?ms=-0.95 V.
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